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2SC3420
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
* * *
High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High collector power dissipation: PC = 10 W (Tc = 25C), PC = 1.5 W (Ta = 25C)
Absolute Maximum Ratings (Tc = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 40 20 8 5 8 1 1.5 10 150 -55 to 150 A Unit V V V
JEDEC JEITA TOSHIBA
A W C C
2-8H1A
Weight: 0.82 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2SC3420
Electrical Characteristics (Tc = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 40 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 0.1 A VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min 20 140 70 Typ. 100 40 Max 100 100 600 1.0 1.5 V V MHz pF Unit nA nA V
Note 3: hFE (1) classification Y: 140 to 240, GR: 200 to 400, BL: 300 to 600
Marking
Lot No.
Characteristics indicator
C3420
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Part No. (or abbreviation code)
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2SC3420
IC - VCE
10 Common emitter 8 200 150 6 100 70 50 4 30 20 2 IB = 10 mA Tc = 25C 8 7 Common emitter VCE = 2 V
IC - VBE
(A)
(A)
6 5 4 3 Tc = 100C 2 1 25 -25
Collector current IC
0 0 0 1 2 3 4 5 6
Collector current IC
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE (V)
hFE - IC
1000 500 Tc = 100C 25 -25 5 3 10
Safe Operating Area
IC max (pulsed)** IC max (continuous) 100 ms* 10 ms*
DC current gain hFE
300
(A)
100 50 30 Common emitter 10 0.01 VCE = 2 V 0.03 0.1 0.3 1 3 10
Collector current IC
DC operation Tc = 25C 1
Collector current IC
(A)
0.5 * : Single nonrepetitive pulse Tc = 25C 0.3 **: Pulse width = 10 ms (max) Duty cycle = 30% (max) Tc = 25C Curves must be derated linearly with increase in temperature 0.1 1 3 10 VCEO max 30 50
Collector-emitter voltage
VCE (V)
VCE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
3 Common emitter 1 0.5 0.3 Tc = 100C 25 0.1 0.05 0.03 0.01 0.03 0.1 0.3 1 3 10 -25 IC/IB = 40
Collector current IC
(A)
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2SC3420
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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